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10-fz062ta040fb-p984d18/-fb01-p984d28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet flow pfc 0 600 v/ 2 x 20 a / 35 khz vincotech clip-in housing compact and low inductance design suitable for interleaved topology suitable for curent sensing in collector or in emitter ultrafast boost igbt and fred pfc for welding fz062ta040fb01 pfc for smps pfc for motor drives pfc for ups pfc for battery charger fz062ta040fb03 fz062ta040fb; without scr, current sense in collector fz062ta040fb01; with scr, current sense in collector fz062ta040fb02; without scr, current sense in emitter fz062ta040fb03; with scr, current sense in emitter t j =25c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 1600 v t h =80c 35 t c =80c t h =80c 40 t c =80c maximum junction temperature t j max 150 c input rectifier thyristor repetitive peak reverse voltage v rrm 800 v t h =80c 34 t c =80c surge forward current i fsm 250 a i 2 t 310 a 2 s t h =80c 44 t c =80c maximum junction temperature t j max 150 c t j =t j max fz062ta040fb fz062ta040fb02 310 t j =25c t j =t j max t p =10ms i 2 t power dissipation per thyristor p tot input rectifier diode dc forward current i2t-value dc forward current surge forward current power dissipation per diode a w a w t j =25c t j =t j max t p =10ms a types i2t-value maximum ratings i f a 2 s i fsm condition t j =t j max features flow 0 housing target applications schematic i f p tot 250 1 revi sion: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet t j =25c, unless otherwise specified parameter symbol value unit maximum ratings condition pfc igbt collector-emitter break down voltage v ce 600 v t h =80c 27 t c =80c 150 t h =80c 71 t c =80c gate-emitter peak voltage v ge +/- 20 v t sc t j 150c 10 s v cc v ge =15v 600 v maximum junction temperature t j max 150 c c.t. inverse diode t h =80c 8 t c =80c 16 t h =80c 14 t c =80c pfc diode t h =80c 25 t c =80c 50 t h =80c 37 t c =80c pfc shunt dc link capacitor thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm clearance insulation voltage creepage distance t op operation temperature under switching condition -40?+(tjmax - 25) c storage temperature t stg -40?+125 c max.dc voltage v max 500 v t c =25c 600 v rrm t j =t j max maximum junction temperature t j max a v a a c a w a i frm t p limited by t j max 44.7 t j =25c t j =t j max t j =25c t j =t j max 175 600 t j =t j max repetitive peak forward current v rrm t j max p tot power dissipation peak repetitive reverse voltage dc forward current i frm maximum junction temperature dc forward current i f repetitive peak collector current short circuit ratings dc collector current peak repetitive reverse voltage power dissipation per igbt w w w c a a v t j =t j max i cpulse p tot i c p tot i f repetitive peak forward current power dissipation per diode dc forward current i f power dissipation per shunt p tot 10 600 t c =25c t c =25c t p limited by t j max t p limited by t j max t j =t j max 2 revi sion: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 1.16 1.4 t j =125c 1.11 t j =25c 0.9 t j =125c 0.77 t j =25c 9 t j =125c 12 t j =25c 0.02 t j =150c 2 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um =1 w/mk 1.72 k/w t j =25c 1.25 1.6 t j =125c 1.22 t j =25c 0.93 t j =125c 0.82 t j =25c 0.011 t j =125c 0.014 t j =25c 0.05 t j =125c 2 i g =0,5a t j =25c 2 di g /dt=0,5a/us i g =0,2a t j =25c <1 di g /dt=0,2a/us t j =125c 500 i g =0,2a t j =125c 150 f=50hz vd=2/3vdrm t j =125c 150 t p =200us vd=6v t j =25c 50 t p =10us t j =25c 90 i g =0,2a vd=6v t j =25c 1.3 t j =-40c 1.6 vd=6v t j =25c 11 28 t j =-40c 50 t j =125c 0.2 t j =125c 1 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1.57 k/w t j =25c 3 4 5 t j =125c t j =25c 2.74 3.3 t j =125c 3.25 t j =25c 40 t j =125c 3.25 t j =25c 0.2 t j =125c n.a. t j =25c 22 t j =125c 22.6 t j =25c 14 t j =125c 14.6 t j =25c 327.6 t j =125c 354.2 t j =25c 9.4 t j =125c 11.1 t j =25c 0.5052 t j =125c 0.7837 t j =25c 0.7981 t j =125c 0.968 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 0.99 k/w ma ma a/ s s s v/ s ma s v pf v ma ma v ua ? ns nc 2572 158 158 vd=1/2vdr m 40 vd=1/2vdr m 26 100 vd=2/3vdr m vd=2/3vdr m 800 latching current v gd i gt tj=25c vce 0 20 0.002 holding current i h t q ua v mws vd=1/2vdr m 480 0 v v m ? 30 30 30 1500 forward voltage v f i r reverse current input rectifier thyristor v v m ? ma 30 30 30 characteristic values forward voltage threshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) v f v to r t value i l critical rate of rise of off-state voltage input rectifier diode threshold voltage (for power loss calc. only) v to gate controlled delay time gate controlled rise time reverse current circuit commutated turn-off time conditions v gt gate trigger voltage gate non-trigger voltage gate trigger current i gd (di/dt)cr r t i r (dv/dt)cr t gr t gd slope resistance (for power loss calc. only) critical rate of rise of on-state current gate non-trigger current input capacitance output capacitance reverse transfer capacitance gate charge c rss 15 c oss f=1mhz v ge(th) t r t f v ce(sat) i ges i ces e off c ies q gate collector-emitter cut-off rise time rgoff=8 ? rgon=8 ? turn-off energy loss per pulse r gint turn-off delay time e on t d(off) turn-on energy loss per pulse fall time t d(on) 15 turn-on delay time gate emitter threshold voltage collector-emitter saturation voltage pfc igbt gate-emitter leakage current integrated gate resistor 600 0 400 25 50 30 245 tj=25c 50 3 revisi on: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max characteristic values value conditions t j =25c 1.66 tj=125c 1.61 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 5.12 k/w tj=25c 2.52 2.8 t j =125c 1.81 t j =25c 100 t j =125c t j =25c 37.632 t j =125c 59.961 t j =25c 12.6 t j =125c 23 t j =25c 0.2238 t j =125c 0.7628 t j =25c 0.0115 t j =125c 0.1151 di(rec)max t j =25c 16814 /dt t j =125c 11387 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1.88 k/w 4.755.3 < 50 < 6.5 < 3 power dissi p ation constant a mws k/w nh c 480 22 tj=25c tj=25c tj=100c tj=25c 3.5 ns v a thermistor dc link capacitor c value c 210 rated resistance r 5 -5 deviation of r100 r/r r25=22 k ? mw/k power dissipation p mw reverse leakage current peak recovery current peak rate of fall of recovery current reverse recovery charge pfc shunt m ? ppm/k t rr r pfc diode forward voltage diode forward voltage c.t. inverse diode reverse recovery time reverse recovered energy inductance internal heat resistance temperature coeficient r1 value i rm v f e rec l t c r thi q rr i rrm v f 15 600 rgoff=8 ? 20c to 60c % nf 540 600 k ? 400 30 30 v a/ s tol. 3% tj=25c 3940 k tol. 3% tj=25c 4000 k b-value b (25/50) b-value b (25/100) 4 revisi on: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 1 inverse diode figure 2 inverse diode typical diode forward current as diode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f )z thjh = f(t p ) t p = 250 s d = tp / t r thjh = 5.12 k/w figure 3 inverse diode figure 4 inverse diode power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) t j = 150 oc t j = 150 oc pfc switch & c.t. inverse diode 0 4 8 12 16 20 0112233 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 8 16 24 32 40 0 50 100 150 200 t h ( o c) p tot (w) 0 2 4 6 8 10 12 0 50 100 150 200 t h ( o c) i f (a) 5 revisi on: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 1 pfc switch figure 2 pfc switch typical output characteristics typical output characteristics i d = f(v ds ) i d = f(v ds ) t p = 250 s t p = 250 s t j = 25 c t j = 125 c v gs from 5 v to 15 v in steps of 1 v v gs from 5 v to 15 v in steps of 1 v figure 3 pfc switch figure 4 pfc fred typical transfer characteristics typical diode forward current as a function of forward voltage i d = f(v ds ) i f = f(v f ) t p = 250 s t p = 250 s v ds = 10 v pfc 0 20 40 60 80 100 012234 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 25 50 75 100 125 01122334455 v ds (v) i d (a) 0 25 50 75 100 125 01122334455 v ds (v) i d (a) 0 5 10 15 20 25 30 0235689 v gs (v) i d (a) t j = 25c t j = t jmax -25c 6 revisi on: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 5 pfc switch figure 6 pfc switch typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i d ) e = f(r g ) inductive load inductive load t j = 25/125 c t j = 25/125 c v ds = 400 v v ds = 400 v v gs = 15 v v gs = 15 v r gon = 8 ? i d = 30 a r goff = 8 ? figure 7 pfc switch figure 8 pfc switch typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector (drain) current as a function of gate resistor e rec = f(i c )e rec = f(r g ) inductive load inductive load t j = 25/125 c t j = 25/125 c v ds = 400 v v ds = 400 v v gs = 15 v v gs = 15 v r gon = 8 ? i d = 30 a r goff = 8 ? pfc t j = t jmax -25c e rec t j = 25c e rec 0.000 0.050 0.100 0.150 0.200 0.250 0.300 0.350 0 20406080100 i c (a) e (mws) t j = t jmax - 25c e rec t j = 25c e rec 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0.140 0.160 0.180 0 8 16 24 32 40 r g ( ) e (mws) e off e on e on e off 0.0 0.5 1.0 1.5 2.0 2.5 0 2 04 06 08 01 0 0 i c (a) e (mws) t j = t jmax -25c e off e on e on t j =25c e off 0.0 0.5 1.0 1.5 2.0 2.5 0 8 16 24 32 40 r g ( ) e (mws) 7 revisi on: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 9 pfc switch figure 10 pfc switch typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i d ) t = f(r g ) inductive load inductive load t j = 125 c t j = 125 c v ds = 400 v v ds = 400 v v gs = 15 v v gs = 15 v r gon = 8 ? i c = 30 a r goff = 8 ? figure 11 pfc fred figure 12 pfc fred typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) t j = 25/125 c t j = 25/125 c v ce = 400 v v r = 400 v v ge = 15 v i f = 30 a r gon = 8 ? v gs = 15 v pfc t doff t f t don t r 0.001 0.010 0.100 1.000 10.000 0 102030405060708090100 i d (a) t ( s) t doff t don t r 0.001 0.010 0.100 1.000 10.000 0 8 16 24 32 40 r g ( ) t ( s) tf t j = t jmax -25c t rr t j = 25c t rr 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 8 16 24 32 40 r gon ( ) t rr ( s) t rr t rr 0.00 0.01 0.02 0.02 0.03 0.04 0 102030405060708090100 i c (a) t rr ( s) 8 revisi on: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 13 pfc fred figure 14 pfc fred typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c )q rr = f(r gon ) at t j = 25/125 c t j = 25/125 c v ce = 400 v v r = 400 v v ge = 15 v i f =30 a r gon = 8 ? v gs =15 v figure 15 pfc fred figure 16 pfc fred typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) t j = 25/125 c t j = 25/125 c v ce = 400 v v r = 400 v v ge = 15 v i f = 30 a r gon = 8 ? v gs = 15 v pfc t j = t jmax -25c i rrm t j = 25c i rrm 0 20 40 60 80 100 0 8 16 24 32 40 r go n ( ) irr m (a) t j = t jmax - 25c q rr t j = 25c q rr 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 8 16 24 32 40 r gon ( ) q rr ( c) t j = t jmax - 25c i rrm t j = 25c i rrm 0 20 40 60 80 100 0 102030405060708090100 i c (a) irr m (a) t j = t jmax -25c q rr t j = 25c q rr 0.0 0.5 1.0 1.5 2.0 0 102030405060708090100 i c (a) q rr ( c) 9 revisi on: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 17 pfc fred figure 18 pfc fred typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) t j = 25/125 c t j = 25/125 c v ce = 400 v v r = 400 v v ge = 15 v i f = 30 a r gon = 8 ? v gs = 15 v figure 19 pfc switch figure 20 pfc fred igbt/mosfet transient thermal impedance fred transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p )z thjh = f(t p ) d = t p / t d = t p / t r thjh = 0.99 k/w r thjh = 1.87 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0.049 4.52e+00 0.04 1.03e+01 0.198 6.47e-01 0.21 9.26e-01 0.559 1.37e-01 0.76 1.43e-01 0.129 2.16e-02 0.57 3.47e-02 0.030 2.42e-03 0.18 4.85e-03 0.022 2.71e-04 0.11 6.60e-04 pfc di 0 /dt 25 t j = 25c di rec /dt 25 t j = t jmax - 25c di 0 /dt 125 di rec /dt 125 0 4000 8000 12000 16000 20000 24000 0 8 16 24 32 40 r gon ( ) di rec / dt (a/ s) t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di 0 /dt 125 t j = t jmax - 25c di r /dt 125 di r /dt 25 t j = 25c di 0 /dt 25 0 4000 8000 12000 16000 20000 24000 0 102030405060708090100 i c (a) di rec / dt (a/ s) 10 revis ion: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 21 pfc switch figure 22 pfc switch power dissipation as a collector/drain current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) t j = 150 oc t j = 150 oc v gs = 15 v figure 23 pfc fred figure 24 pfc fred power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) t j = 150 oc t j = 150 oc pfc 0 30 60 90 120 150 180 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 t h ( o c) i c (a) 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 5 10 15 20 25 30 35 0 50 100 150 200 t h ( o c) i f (a) 11 revis ion: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 25 pfc switch figur e 26 pfc switch safe operating area as a function gate voltage vs gate charge of drain-source voltage i d = f(v ds )v gs = f(qg) d = single pulse i d = 50 a t h = 80 oc v gs = 15 v t j =t jmax oc pfc v ds (v) i d (a) 10 3 10 0 10 -1 10 1 10 2 10 3 10us 100us 1ms 10ms 100ms dc 10 2 10 0 0 2 4 6 8 10 12 14 16 18 0 50 100 150 200 250 300 qg (nc) v gs (v) 120v 480v 12 revision: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 1 rectifier diode figure 2 rectifier diode typical diode forward current as diode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f )z thjh = f(t p ) t p = 250 sd = t p / t r thjh = 1.728 k/w figure 3 rectifier diode figure 4 rectifier diode power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) t j = 150 oc t j = 150 oc input rectifier bridge 0 15 30 45 60 75 90 0.0 0.5 1.0 1.5 2.0 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 t h ( o c) i f (a) 13 revis ion: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 1 thyristor figure 2 thyristor typical thyristor forward current as thyristor transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f )z thjh = f(t p ) t p = 250 sd = t p / t r thjh = 1.57 k/w figure 3 thyristor figure 4 thyristor power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) t j = 150 oc t j = 150 oc thyristor 0 10 20 30 40 50 0.0 0.3 0.6 0.9 1.2 1.5 1.8 v f (v ) i f (a) t j = 25c t j = t jmax -25c 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 t h ( o c) i f (a) t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 14 revis ion: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 5 thyristor gate trigger characteristics figure 1 thermistor typical ntc characteristic as a function of temperature r t = f(t) thyristor thermistor ntc-typical temperature characteristic 0 5000 10000 15000 20000 25000 25 50 75 100 125 t (c) r/ ? t j =25 o c i g (a) v g (v) 10 1 10 2 10 0 10 -1 10 -2 10 2 10 -1 t j =125 o c 10 0 10 1 10 -3 t j =-40 o c 20v;20 ohm v gt i gt i gd 50w (0,5ms) 75w (0,1ms) 25w (8ms) p g (t p ) v gd 15 revis ion: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet t j 125 c r gon 8 ? r goff 8 ? figure 1 pfc switch figure 2 pfc switch turn-off switching waveforms & definition of t dof f , t eof f turn-on switching waveforms & definition of t don , t eon (t eof f = integrating time for e of f )( t eon = integrating time for e on ) v ge (0%) = 0v v ge (0%) = 0v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 400 v v c (100%) = 400 v i c (100%) = 50 a i c (100%) = 50 a t doff = 0.35 s t don = 0.02 s t eoff = 0.43 s t eon = 0.13 s figure 3 pfc switch figure 4 pfc switch turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 400 v v c (100%) = 400 v i c (100%) = 50 a i c (100%) = 50 a t f = 0.011 s t r = 0.015 s switching definitions pfc general conditions = = = i c 10% v ge 10% t don v ce 3% -50 0 50 100 150 200 250 300 2.95 2.99 3.03 3.07 3.11 3.15 3.19 time(us) % i c v ce t eon v ge i c 1% v ce 90% v ge 90% -50 -30 -10 10 30 50 70 90 110 130 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 time (us) % t doff t eoff v ce i c v ge fitted ic10% ic 90% ic 60% ic 40% -20 0 20 40 60 80 100 120 140 0.29 0.30 0.31 0.32 0.33 0.34 0.35 time (us) % v ce i c tf i c 10% i c 90% -20 50 120 190 260 3.01 3.02 3.03 3.04 3.05 3.06 3.07 time(us) % tr v ce ic 16 revis ion: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 5 pfc switch figure 6 pfc switch turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 20.08 kw p on (100%) = 20.08 kw e off (100%) = 0.97 mj e on (100%) = 0.78 mj t eoff = 0.43 s t eon = 0.126 s figure 7 pfc switch figure 8 pfc fred gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t r r v geoff = 0v v d (100%) = 400 v v geon = 15 v i d (100%) = 50 a v c (100%) = 400 v i rrm (100%) = -73 a i c (100%) = 50 a t rr = 0.03 s q g = 207.14 nc switching definitions pfc ic 1% uge90% -20 0 20 40 60 80 100 120 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 time (us) % poff eoff teoff uce3% uge10% -20 10 40 70 100 130 160 2.95 3 3.05 3.1 3.15 3.2 time(us) % pon eon teon -10 -5 0 5 10 15 20 -50 0 50 100 150 200 250 qg (nc) uge (v) i rrm 10% i rrm 90% i rrm 100% trr -200 -150 -100 -50 0 50 100 150 3.03 3.04 3.05 3.06 3.07 3.08 3.09 3.1 time(us) % id ud fitted 17 revis ion: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet figure 9 pfc fred figure 10 pfc fred turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr )( t erec = integrating time for e rec ) i d (100%) = 50 a p rec (100%) = 20.08 kw q rr (100%) = 1.08 c e rec (100%) = 0.19 mj t qint = 0.05 s t erec = 0.05 s switching definitions pfc tqint -200 -100 0 100 200 3.01 3.03 3.05 3.07 3.09 3.11 3.13 time(us) % id q rr 0 20 40 60 80 100 120 3.01 3.03 3.05 3.07 3.09 3.11 3.13 time(us) % p rec erec te rec 18 revis ion: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet version ordering code in datamatrix as in packaging barcode as without scr, current sense in collector 10-fz062ta040fb-p984d18 p984d18 p984d18 with scr, current sense in collector 10-fz062ta040fb01-p984d28 p984d28 p984d28 without scr, current sense in emitter 10-FZ062TA040FB02-P984D38 p984d38 p984d38 with scr, current sense in emi tter 10-fz062ta040fb03-p984d48 p984d48 p984d48 pin nr. 7 & 12 without electrical connection pin nr. 7 & 12 without electrical connection pin nr. 21 & 24 without electrical connection rectifier(fz062ta040fb01 & fb03) boost stage(fz062ta040fb02 & fb03) rectifier(fz062ta040fb & fb02) boost stage(fz062ta040fb & fb01) ordering code & marking ordering code and marking - outline - pinout outline pinout 19 revis ion: 2 copyright by vincotech
10-fz062ta040fb-p984d18/-fb01-p984d 28/-fb02-p984d38/-fb03-p984d48 preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 20 revisi on: 2 copyright by vincotech

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